相变存储单元的制备方法;METHOD OF MAKING PHASE CHANGE MEMORY CELL

摘要

本发明提供一种相变存储单元的制备方法，包括：在一基底一表面设置至少一奈米碳管线，所述奈米碳管线的轴向平行于所述基底的表面；弯折所述至少一奈米碳管线，形成一弯折部；设置一第一电极、第二电极及一第三电极，所述第一电极、第二电极分别设置于所述弯折部的两侧且与所述奈米碳管线电连接，所述第三电极与所述奈米碳管线的弯折部间隔设置；及沈积一相变层至少部份覆盖所述弯折部，并且与所述第三电极电连接。; bending at least one part of the carbon nanotube yarn to form a bending part; setting a first electrode, a second electrode and a third electrode, wherein the first electrode and the second electrode are set on two sides of the bending part separately, and electrically connected with the carbon nanotube yarn, and the third electrode is spaced from the bending part of the carbon nanotube yarn; depositing a phase change layer to cover at least one part of the bending part, wherein the phase change layer is electrically connected with the third electrode.