| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve the operational stability of a semiconductor device having an active matrix substrate and a counter substrate.SOLUTION: The semiconductor device comprises a first substrate 12, a second substrate 32 or a photoelectric conversion substrate 51, a plurality of thin-film transistors 14, a plurality of semiconductor layers 14i, and a plurality of pixel electrodes 16 supported by the first substrate, an electrode layer 34 supported by the second substrate and a photoelectric conversion layer 36 formed on the electrode layer or an electrode layer 54 formed on a surface, opposite the first substrate side, of the photoelectric conversion substrate, and at least one X-ray absorption connection layer 40 provided between the plurality of semiconductor layers and the photoelectric conversion layer or the photoelectric conversion substrate. The X-ray absorption connection layer contains an element whose linear attenuation coefficient at 20 keV is 200 cmor more, and has a plurality of X-ray absorption connection areas 40a each of which, when seen from the normal direction of the first substrate, overlaps at least part of one of the plurality of pixel electrodes or the whole of one of the plurality of semiconductor layers.</p> |
