| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME |
| 摘要 |
A semiconductor device includes: a first magnetic layer (1) disposed on a flat substrate surface; a second magnetic layer (3) disposed above the first magnetic layer (1) and magnetically coupled to the first magnetic layer (1) by magnetostatic coupling or exchange coupling; and a third thin film layer (8) formed between the first magnetic layer (1) and the second magnetic layer (3), the third thin film layer (8) having such a thickness as to avoid inhibiting the magnetic coupling between the first magnetic layer (1) and the second magnetic layer (3). |
| 申请公布号 |
US2015200354(A1) |
申请公布日期 |
2015.07.16 |
| 申请号 |
US201314409886 |
申请日期 |
2013.04.24 |
| 申请人 |
NEC CORPORATION ;TOHOKU UNIVERSITY |
发明人 |
Honjou Hiroaki;Kinoshita Keizo;Ohno Hideo |
| 分类号 |
H01L43/02;H01L43/12;H01L43/08;H01L43/10 |
主分类号 |
H01L43/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a first magnetic layer disposed on a flat substrate surface; a second magnetic layer disposed above the first magnetic layer and magnetically coupled to the first magnetic layer by magnetostatic coupling or exchange coupling; and a third thin film layer formed between the first magnetic layer and the second magnetic layer, the third thin film layer having such a thickness as to avoid inhibiting the magnetic coupling between the first magnetic layer and the second magnetic layer. |
| 地址 |
Tokyo JP |
