| 主权项 |
1. A composite wafer comprising:
a semiconductor-on-diamond wafer comprising at least one layer of single-crystal semiconductor and at least one layer of diamond; a carrier plate; and an adhesive disposed between said semiconductor-on-diamond wafer and said carrier plate; wherein said at least one layer of diamond is proximal to said carrier plate, wherein said carrier plate comprises a material having a coefficient of linear thermal expansion a at 20° C. in at least one plane of no more than 10.0×10−6 K−1, wherein said adhesive comprises a material having a melting point of at least 900° C., wherein said adhesive is capable of withstanding a temperature change of at least 900° C. in no more than 1.5 minutes while maintaining bonding between the semiconductor-on-diamond wafer and the carrier plate, wherein an exposed surface of single-crystal semiconductor has a surface flatness of better than 30 μm over a total area of the exposed surface of single-crystal semiconductor, wherein the composite wafer has a bow of no more than 30 μm over the total area of the composite wafer, wherein the composite wafer has a thickness variation of no more than 30 μm over the total area of the composite wafer, wherein the composite wafer has a longest linear dimension of at least 50 mm, and wherein said at least one layer of single-crystal semiconductor comprises at least one semiconductor selected from the group containing gallium nitride, aluminum nitride, and indium nitride. |
