TRANSISTOR DESIGN

摘要

Some embodiments of the present disclosure relate to a transistor device formed in a semiconductor substrate containing dopant impurities of a first impurity type. The transistor device includes channel composed of a delta-doped layer comprising dopant impurities of the first impurity type, and configured to produce a peak dopant concentration within the channel. The channel further includes a layer of carbon-containing material overlying the delta-doped layer, and configured to prevent back diffusion of dopants from the delta-doped layer and semiconductor substrate. The channel also includes of a layer of substrate material overlying the layer of carbon-containing material, and configured to achieve steep retrograde dopant concentration profile a near a surface of the channel. In some embodiments, a counter-doped layer underlies the delta-doped layer configured to reduce leakage within the semiconductor substrate, and includes dopant impurities of a second impurity type, which is opposite the first impurity type.

主权项

1. A transistor device formed on a semiconductor substrate, comprising:
a recess disposed within a transistor region of the semiconductor substrate, and having a bottom surface that is lower than an upper surface of the semiconductor substrate, wherein the transistor region is doped with dopant impurities of a first impurity type; a channel region comprising:
a delta-doped layer comprising dopant impurities of the first impurity type;a layer of carbon-containing material overlying the delta-doped layer and confined to the recess; anda layer of semiconductor material overlying the layer of carbon-containing material and confined to the recess; a gate structure disposed over the layer of semiconductor material; and a source region and a drain region laterally spaced on opposing sides of the channel region.