| 摘要 |
The present invention provides an image sensor device including a substrate, a channel formed in the substrate, a photoelectric transfer region formed in the substrate adjacent to one side of the channel, a voltage transfer region formed in the substrate adjacent to the other side of the channel, wherein the doping concentration of the channel is decreased from the side adjacent to the photoelectric transfer region to the other side adjacent to the voltage transfer region of the channel, a gate dielectric layer formed on the substrate, and a gate formed on the gate dielectric layer. The present invention also provides a method for fabricating the image sensor device. |
