发明名称 Light Sensing Integrated Circuit and Manufacturing Method of Sensing Integrated Circuit
摘要 A manufacturing method of a sensing integrated circuit including the following acts. A plurality of transistors are formed. At least one dielectric layer is formed on or above the transistors. A plurality of connecting structures are formed in the dielectric layer. The connecting structures are respectively and electrically connected to the transistors. A plurality of separated conductive wells are respectively formed in electrical contact with the connecting structures.
申请公布号 US2015200215(A1) 申请公布日期 2015.07.16
申请号 US201414156860 申请日期 2014.01.16
申请人 Taiwan Semiconductor Manufacturing CO., LTD. 发明人 Luo Tzo-Hung;Chiang Chin-Hung
分类号 H01L27/144;H01L31/0216;H01L21/768;H01L21/02;H01L31/02;H01L31/0232;H01L21/77 主分类号 H01L27/144
代理机构 代理人
主权项
地址 Hsinchu TW