发明名称 |
Light Sensing Integrated Circuit and Manufacturing Method of Sensing Integrated Circuit |
摘要 |
A manufacturing method of a sensing integrated circuit including the following acts. A plurality of transistors are formed. At least one dielectric layer is formed on or above the transistors. A plurality of connecting structures are formed in the dielectric layer. The connecting structures are respectively and electrically connected to the transistors. A plurality of separated conductive wells are respectively formed in electrical contact with the connecting structures. |
申请公布号 |
US2015200215(A1) |
申请公布日期 |
2015.07.16 |
申请号 |
US201414156860 |
申请日期 |
2014.01.16 |
申请人 |
Taiwan Semiconductor Manufacturing CO., LTD. |
发明人 |
Luo Tzo-Hung;Chiang Chin-Hung |
分类号 |
H01L27/144;H01L31/0216;H01L21/768;H01L21/02;H01L31/02;H01L31/0232;H01L21/77 |
主分类号 |
H01L27/144 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Hsinchu TW |