SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a semiconductor substrate, an interlayer insulating layer formed on the semiconductor substrate, a gate structure formed in the interlayer insulating layer, an isolation layer formed in the semiconductor substrate, a through-silicon via formed to penetrate the semiconductor substrate, the interlayer insulating layer, and the isolation layer, and a first conduction type first impurity region coming in contact with the isolation layer and formed to surround only a portion of a sidewall of the through-silicon via in the semiconductor substrate.

主权项

1. A semiconductor device comprising:
a semiconductor substrate including a first region and a second region; an interlayer insulating layer formed on the semiconductor substrate; a semiconductor element formed on the semiconductor substrate in the first region, the semiconductor element including a gate structure formed in the interlayer insulating layer; an isolation layer formed in the semiconductor substrate in the second region; a through-silicon via formed to penetrate the semiconductor substrate, the interlayer insulating layer, and the isolation layer in the second region; and a first conduction type first impurity region contacting with the isolation layer and formed to surround only a portion of a sidewall of the through-silicon via in the semiconductor substrate in the second region.