METHODS OF FORMING CONDUCTIVE PATTERNS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME

摘要

The present disclosure herein relates to methods of forming conductive patterns and to methods of manufacturing semiconductor devices using the same. In some embodiments, a method of forming a conductive pattern includes forming a first conductive layer and a second conductive layer on a substrate. The first conductive layer and the second conductive layer may include a metal nitride and a metal, respectively. The first conductive layer and the second conductive layer may be etched using an etchant composition that includes phosphoric acid, nitric acid, an assistant oxidant and a remainder of water. The etchant composition may have substantially the same etching rate for the metal nitride and the metal.

主权项

1. A method of forming a conductive pattern, comprising:
forming a first conductive layer and a second conductive layer on a substrate, the first conductive layer including a metal nitride and the second conductive layer including a metal; and etching the first conductive layer and the second conductive layer using an etchant composition that includes phosphoric acid, nitric acid, an assistant oxidant and water, the etchant composition having substantially the same etching rate for the metal nitride and the metal.