| 摘要 |
<p>Provided are a resonant tunneling diode element which is capable of ultrafast operation, has high manufacturability, and achieves low-loss and low-power consumption, and a non-volatile memory using the same. In the resonant tunneling diode element, a quantum well comprises a plurality of barrier layers and a well layer between the barrier layers, wherein the well layer is provided with a potential gradient by way of polarization or a compositional gradient, giving the quantum well a quantum level that allows electrons to be accumulated inside the quantum well by inter-sub-band transition. Alternatively, a middle layer, whereof the band gap differs from all those of the well layer and the barrier layers, is provided between the well layer and one of the barrier layers, giving the quantum well a quantum level that allows electrons to be accumulated inside the quantum well by inter-sub-band transition. A non-volatile memory that stores a bistable state through electron accumulation and electron release is implemented with the resonant tunneling diode element that allows for sub-band transition.</p> |
