| 摘要 |
<p>Embodiments of the present invention generally relate to semiconductor processing chamber, and more specifically, a heated support pedestal for a semiconductor processing chamber. In one embodiment, the pedestal comprises a substrate support including a support surface for receiving a substrate, a heating element encapsulated within the substrate support, and a first hollow shaft having a first end and a second end, where the first end is fixed to the substrate support. The substrate support and the first hollow shaft are made of a ceramic material and the first hollow shaft has a length between about 50 mm to 100 mm. The pedestal further comprises a second hollow shaft coupled to the second end of the first hollow shaft. The second hollow shaft has a length that is greater than the length of the first hollow shaft.</p> |
