| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor which has both translucency and characteristic of normally-off; and has both translucency and characteristics of reduced off-state current; and has both translucency and characteristics of little loss of on-state current; and which inhibits time-dependent change in characteristics.SOLUTION: A semiconductor device comprises: an oxide semiconductor layer 123 which includes a channel formation region and uses an oxide semiconductor having a minimized carrier concentration and a wide band gap; a source electrode and drain electrode (115a, 115b) formed by an oxide conductive layer containing hydrogen and oxygen deficiency; and barrier layers 114a, 114b provided between the oxide semiconductor layer, and the source electrode and drain electrode, in which the oxide conductive layer and the oxide semiconductor layer are electrically connected via the barrier layers. |
