发明名称 PHOTORESIST OVERCOAT COMPOSITION
摘要 PROBLEM TO BE SOLVED: To provide an overcoat composition that can solve a problem of an additive-type quencher in negative type development, and a method for forming an electronic device.SOLUTION: The method for forming an electronic device includes the following steps in sequence: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, the photoresist layer formed from a composition that comprises a matrix polymer comprising a unit having an acid labile group, a photoacid generator, and an organic solvent; (c) coating the photoresist layer with a photoresist overcoat composition that comprises a quenching polymer and an organic solvent, the quenching polymer comprising a unit having a basic portion effective to neutralize an acid generated by the photoacid generator in a surface region of the photoresist layer; (d) exposing the photoresist layer to activation radiation; (e) heating the substrate in a post-exposure bake process; and (f) developing the exposed film with an organic solvent developer.
申请公布号 JP2015129939(A) 申请公布日期 2015.07.16
申请号 JP20150000586 申请日期 2015.01.05
申请人 ROHM & HAAS ELECTRONIC MATERIALS LLC 发明人 PARK JONG KEUN;CHRISTOPHER NAM LEE;CECILY ANDES;LEE CHOONG-BONG
分类号 G03F7/11;C08F220/34;G03F7/038;G03F7/039;G03F7/32;H01L21/027 主分类号 G03F7/11
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