| 摘要 |
PROBLEM TO BE SOLVED: To provide an indium phosphide substrate of low dislocation density that has superior uniformity in dopant density in a wafer plane and in a thickness direction for obtaining a compound semiconductor device which has superior uniformity and stability in characteristics in the wafer plane and a superior lifetime, and a method of manufacturing the same.SOLUTION: An indium phosphide substrate of low dislocation density that has superior uniformity in dopant density in a wafer plane and in a thickness direction is obtained by installing a seed crystal which has a specific cross-sectional area ratio to a crystal trunk part at a lower end of a growth container so that the crystal is grown in a <100> azimuth, further installing a growth container which accommodates an indium phosphide raw material, a dopant, and boron oxide in a crystal growth furnace, and lowering the temperature in the growth container after raising the temperature to a temperature as high as or higher than the fusion point of the indium phosphide so as to heat and fuse the boron oxide, indium phosphide rawa material, and dopant. |
