用于筛选具有干扰故障之记忆体单元之方法及装置;METHOD AND APPARATUS FOR SCREENING MEMORY CELLS FOR DISTURB FAILURES

摘要

实施例包含一种方法，其包括：接收一第一电压；以及在测试一记忆体单元时：修改该第一电压以产生不同于该第一电压之一第二电压；及基于(i)将该第二电压施加至该记忆体单元之一电晶体阵列及(ii)将该第一电压施加至该记忆体单元，对该记忆体单元执行一第一读取操作。; and while testing a memory cell: modifying the first voltage to generate a second voltage that is different from the first voltage; and performing a first read operation on the memory cell, based on applying (i) the second voltage to an array of transistors of the memory cell and (ii) the first voltage to the memory cell.