| 发明名称 |
Memory Device Comprising an Electrically Floating Body Transistor |
| 摘要 |
A memory cell comprising includes a silicon-on-insulator (SOI) substrate, an electrically floating body transistor fabricated on the silicon-on-insulator (SOI) substrate, and a charge injector region. The floating body transistor is configured to have more than one stable state through an application of a bias on the charge injector region. |
| 申请公布号 |
US2015200005(A1) |
申请公布日期 |
2015.07.16 |
| 申请号 |
US201514597444 |
申请日期 |
2015.01.15 |
| 申请人 |
Zeno Semiconductor, Inc. |
发明人 |
Han Jin-Woo;Widjaja Yuniarto |
| 分类号 |
G11C11/417;G11C15/04 |
主分类号 |
G11C11/417 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory cell comprising:
a silicon-on-insulator (SOI) substrate; an electrically floating body transistor fabricated on said silicon-on-insulator (SOI) substrate; and a charge injector region; wherein said floating body transistor is configured to have more than one stable state through an application of a bias on said charge injector region. |
| 地址 |
Cupertino CA US |
