发明名称 Flash Memory for Code and Data Storage
摘要 A flash memory for code and data storage includes a code memory array having fast read access and suitability for execute in place, a data memory array having the characteristics of low bit cost and high density storage, and a suitable interface to provide access to both the code and data. The code memory array may be a NOR array or a performance-enhanced NAND array. The memory may be implemented in a single chip package or multi-chip package solution.
申请公布号 US2015199128(A1) 申请公布日期 2015.07.16
申请号 US201514671667 申请日期 2015.03.27
申请人 Winbond Electronics Corporation 发明人 Park Eungjoon;Jigour Robin John;Park Jooweon;Yano Masaru
分类号 G06F3/06 主分类号 G06F3/06
代理机构 代理人
主权项 1. (canceled)
地址 Taichung City TW