发明名称 |
Flash Memory for Code and Data Storage |
摘要 |
A flash memory for code and data storage includes a code memory array having fast read access and suitability for execute in place, a data memory array having the characteristics of low bit cost and high density storage, and a suitable interface to provide access to both the code and data. The code memory array may be a NOR array or a performance-enhanced NAND array. The memory may be implemented in a single chip package or multi-chip package solution. |
申请公布号 |
US2015199128(A1) |
申请公布日期 |
2015.07.16 |
申请号 |
US201514671667 |
申请日期 |
2015.03.27 |
申请人 |
Winbond Electronics Corporation |
发明人 |
Park Eungjoon;Jigour Robin John;Park Jooweon;Yano Masaru |
分类号 |
G06F3/06 |
主分类号 |
G06F3/06 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Taichung City TW |