| 摘要 |
The purpose of the present invention is to provide a feature capable of reducing the cost of a power semiconductor device while maintaining the heat dissipation properties thereof as much as possible. This power semiconductor device is equipped with a lead frame (1a), power semiconductor elements (2) positioned on the top surface of the lead frame (1a), and an insulating layer (6) positioned on the bottom surface of the lead frame (1a). Furthermore, at least part of the line forming the perimeter line of the region where the insulating layer (6) is positioned on said bottom surface matches, when seen from a top-surface view, at least part of the line forming an expanded perimeter line obtained by expanding, by only the thickness dimension of the lead frame (1a), the perimeter line of the region where the power semiconductor elements (2) are positioned on said top surface. |
