| 摘要 |
根据实施例的一种磁域壁移动记忆体包括：磁记忆体奈米线；与该磁记忆体奈米线相交的写入磁线；设置在该写入磁线及该磁记忆体奈米线之间的相交区域中的中间接合部；放置在该写入磁线之与该磁记忆体奈米线相同侧及相对侧的其中一者上的相邻钉扎部；附接至该磁记忆体奈米线的读取单元；将写入电流施加至该写入磁线的一对第一电极；及施加用于导致该磁记忆体奈米线移动磁域壁的电流的一对第二电极，其中与该等相邻钉扎部接触之该写入磁线的接触面具有彼此反平行的磁化组态。; a write magnetic wire intersecting with the magnetic memory nanowire; an intermediate joining portion provided in an intersection region between the write magnetic wire and the magnetic memory nanowire; adjacent pinning portions placed on one of the same side and the opposite side of the write magnetic wire as and from the magnetic memory nanowire; a read unit attached to the magnetic memory nanowire; a pair of first electrodes that applies a write current to the write magnetic wire; and a pair of second electrodes that applies a current for causing the magnetic memory nanowire to move a magnetic domain wall, wherein contact faces of the write magnetic wire in contact with the adjacent pinning portions have magnetization configurations antiparallel to each other. |
