| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can increase a donor generation rate by proton radiation to improve electrical characteristics.SOLUTION: In a semiconductor device, hydrogen atoms 14 and crystal defects 15 are introduced into the inside of an ntype semiconductor substrate 1 by proton implantation 13; crystal defects 12 are generated inside the ntype semiconductor substrate 1 by electron beam irradiation 11 before proton implantation 13 or after proton implantation 13; subsequently a heat treatment for donor generation is performed; by controlling a quantity of the crystal defects 12, 15 to be optimal during the heat treatment for donor generation, a donor generation rate can be increased; at the end of the heat treatment for donor generation, by recovering the crystal defects 12, 15 formed by electronic beam irradiation 11 and proton implantation 13 and by controlling a quantity of the crystal defects to be optimal, improvement in withstand voltage and reduction in leakage current can be achieved. |
