SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device and a method for manufacturing the same are disclosed, which can form a gate electrode material only in a recess of a buried gate cell structure, improve a Gate Induced Drain Leakage (GIDL) of a gate electrode material and a junction (i.e., drain region), prevent the gate electrode material from overlapping with the junction (i.e., drain region), and adjust the depth of junction, thereby improving channel resistance. The method for manufacturing a semiconductor device includes forming a device isolation region defining an active region over a semiconductor substrate, burying a gate electrode material in the semiconductor substrate, forming a gate electrode pattern by etching the gate electrode material, wherein the gate electrode pattern is formed at sidewalls of the active region including a source region, and forming a capping layer in the exposed active region.

主权项

1. A method for manufacturing a semiconductor device comprising:
forming a device isolation region defining an active region over a semiconductor substrate; forming a gate electrode material in the semiconductor substrate; partially etching the gate electrode material to define a gate electrode pattern and a space adjacent to the gate electrode pattern, the gate electrode pattern being formed at sidewalls of a source region in the active region; and forming a capping layer in the space defined adjacent to the gate electrode pattern.