Metal Capping Process And Processing Platform Thereof

摘要

Before depositing a metal capping layer on a metal interconnect in a damascene structure, a remote plasma is used to reduce native oxide formed on the metal interconnect. Accordingly, a remote plasma reducing chamber is integrated in a processing platform for depositing a metal capping layer.

主权项

1. A processing platform for metal capping process, comprising:
a transfer chamber equipped with a robot for transferring a wafer; a load lock chamber for facilitating transfer of the wafer between a vacuum environment of the transfer chamber and an ambient environment outside the processing platform; a remote plasma reducing chamber connected to the transfer chamber, wherein the remote plasma reducing chamber is used for reducing native oxide on metal interconnects on the wafer; and a deposition chamber connected to the transfer chamber, wherein the deposition chamber is used for depositing metal capping layers respectively on the reduced metal interconnects.