METHOD AND CIRCUIT FOR PROGRAMMING NON-VOLATILE MEMORY CELLS OF A VOLATILE/NON-VOLATILE MEMORY ARRAY

摘要

The invention relates to a memory array comprising: a first volatile memory cell (202) including first and second cross-coupled inverters (206, 208) between first and second storage nodes (210, 212); a first non-volatile memory cell (204) including at least one resistive element (218, 218A, 218B) that can be programmed to take one of at least two resistive states (Rmin, Rmax); and a control circuit (224) adapted to couple the first non-volatile memory cell to the first and second storage nodes in order to generate a current for programming the resistive state of the at least one resistive element.