| 摘要 |
Provided are the following: an active matrix substrate manufacturing method with which there is no possibility of the substrate surface being scraped or of abnormal discharge occurring, by which adjustment holes can be provided in an interlayer insulating film, the position of a film to be formed can be easily corrected by matching such position with the position of a film of a lowermost layer, and which has favorable overlapping accuracy; an active matrix substrate; and a display device having the active matrix substrate. An interlayer insulating film (14) of the active matrix substrate uses a SOG material having photosensitivity, and is formed so as to include a gate insulating film (15) formed above a substrate (10) and the interlayer insulating film (14), a first semiconductor film (16), a second semiconductor film (17), and an adjustment hole (14b) for adjusting a source metal pattern. The position of each layer is adjusted by viewing the edge of gate wiring (11) from the adjustment hole (14b). |
