| 摘要 |
<p>According to the present invention, a method for growing a monocrystalline ingot as a method for growing an ingot in a determination direction (111) while rotating and increasing a seed inside a process chamber with a Chokralsky method, comprises the steps of: selecting a target diameter of a silicon ingot for growing; measuring a diameter of an ingot with respect to a seed rotation with a constant cycle using an ADC sensor illuminating a specific portion of an ingot; producing a generation region of a facet surface decreasing a diameter of a silicon ingot as generating in a longitudinal direction with respect to a determination direction (111); and decreasing as much as the fixed value of the target diameter when positioning the facet surface on the measurement point of the ADC sensor. Accordingly, a body region of an ingot growing as securing a silicon melt can be increased by reducing a target diameter on the facet surface generated in determination (111).</p> |
