发明名称 METHOD AND APPARATUS FOR GROWING MONOCRYSTALLINE INGOTS
摘要 <p>A manufacturing method of a monocrystalline ingot of an embodiment comprises the steps of: sensing a diameter of a monocrystalline ingot; calculating a pulling speed of a monocrystalline ingot using the sensed diameter, a target diameter of a monocrystalline ingot, and a target pulling speed; correcting the calculated pulling speed when the sensed diameter is needed to correct; and increasing the monocrystalline ingot in accordance with the corrected pulling speed.</p>
申请公布号 KR20150082858(A) 申请公布日期 2015.07.16
申请号 KR20140002325 申请日期 2014.01.08
申请人 LG SILTRON INCORPORATED 发明人 AN, YUN HA;NA, GWANG HA;NOH, TAE SIK
分类号 C30B15/20;C30B15/30;C30B29/06 主分类号 C30B15/20
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