| 发明名称 |
RECESSED CONTACT TO SEMICONDUCTOR NANOWIRES |
| 摘要 |
A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire. |
| 申请公布号 |
US2015200262(A1) |
申请公布日期 |
2015.07.16 |
| 申请号 |
US201514671666 |
申请日期 |
2015.03.27 |
| 申请人 |
SOL VOLTAICS AB |
发明人 |
Åberg Ingvar;Magnusson Martin;Asoli Damir;Samuelson Lars Ivar;Ohlsson Jonas |
| 分类号 |
H01L29/41;H01L21/02;H01L33/42;H01L33/02;H01L31/0224;H01L29/06;H01L31/042 |
主分类号 |
H01L29/41 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of making a semiconductor nanowire device, comprising:
forming at least one semiconductor nanowire, the semiconductor nanowire having a catalyst particle on a top surface of the semiconductor nanowire or a sacrificial portion comprising the top surface; forming an insulating material around the semiconductor nanowire; removing the catalyst particle or the sacrificial portion to recess the top surface of the nanowire below a top surface of the insulating material; and forming an electrode in ohmic contact with the top surface of the nanowire. |
| 地址 |
LUND SE |
