发明名称 ATTACHING PASSIVE COMPONENTS TO A SEMICONDUCTOR PACKAGE
摘要 Embodiments of the present disclosure provide a method comprising forming an electrically conductive structure on a surface of a semiconductor die, attaching the semiconductor die to a substrate, forming a molding compound to encapsulate the semiconductor die, forming an opening in the molding compound, the opening to at least partially expose the electrically conductive structure, and electrically coupling a passive component to the electrically conductive structure through the opening in the molding compound. Other embodiments may be described and/or claimed.
申请公布号 US2015200114(A1) 申请公布日期 2015.07.16
申请号 US201514665321 申请日期 2015.03.23
申请人 Marvell World Trade Ltd. 发明人 Liou Shiann-Ming;Wu Albert
分类号 H01L21/56;H01L25/16;H01L23/00 主分类号 H01L21/56
代理机构 代理人
主权项 1. A method comprising: forming (i) a first electrically conductive structure formed on an active surface of the semiconductor die and (ii) a second electrically conductive structure formed on the active surface of the semiconductor die, and wherein the first electrically conductive structure provides (i) a power connection for the semiconductor die, or (ii) a ground connection for the semiconductor die; attaching the semiconductor die to a substrate; forming a single molding compound disposed to substantially encapsulate both the substrate and the semiconductor die, including substantially encapsulating the active surface of the semiconductor die, wherein the molding compound has a channel formed in the molding compound; forming an opening in the molding compound, wherein the channel (i) extends from the active surface of the semiconductor die to the opening on the molding compound and (ii) at least partially includes the second electrically conductive structure formed on the active surface of the semiconductor die; attaching a passive component to the molding compound at least partly over the opening on the exterior surface of the molding compound; and electrically coupling the passive component to the active surface of the semiconductor die via the second electrically conductive structure through the channel in the molding compound.
地址 St. Michael BB