| 发明名称 |
RECESSING ULTRA-LOW K DIELECTRIC USING REMOTE PLASMA SOURCE |
| 摘要 |
A portion of the ultra-low k dielectric layer over a substrate is modified using a downstream plasma comprising a first chemistry. The modified portion of the ultra-low k dielectric layer is etched using the downstream plasma comprising a second chemistry. The downstream plasma is generated using a remote plasma source. |
| 申请公布号 |
US2015200042(A1) |
申请公布日期 |
2015.07.16 |
| 申请号 |
US201414152978 |
申请日期 |
2014.01.10 |
| 申请人 |
Applied Materials, Inc. |
发明人 |
Ling Mang Mang;Kang Sean S.;Pender Jeremiah T P;Nemani Srinivas D.;Howard Bradley J. |
| 分类号 |
H01B19/04;H01J37/32 |
主分类号 |
H01B19/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method to manufacture an electronic device comprising:
modifying a portion of the ultra-low k dielectric layer over a substrate using a downstream plasma comprising a first chemistry; and etching the modified portion of the ultra-low k dielectric layer using the downstream plasma comprising a second chemistry, wherein the downstream plasma is generated using a remote plasma source. |
| 地址 |
Santa Clara CA US |
