发明名称 Systems and Methods for Uniform Gas Flow in a Deposition Chamber
摘要 The present disclosure is directed an apparatus for regulating gas flow in a deposition chamber during a deposition process. The apparatus includes an interior wall that forms an accommodating portion that accommodates a wafer support structure and an exterior wall disposed opposite the interior wall. The apparatus further includes an upper surface, coupled to both the interior wall and the exterior wall, that has a plurality of openings therethrough. The plurality of openings are configured to distribute a flow of gas originating above the apparatus when the apparatus is positioned over a gas outlet port of the deposition chamber.
申请公布号 US2015197846(A1) 申请公布日期 2015.07.16
申请号 US201414157324 申请日期 2014.01.16
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 SUNG Su-Jen
分类号 C23C14/22;H01L21/02;C23C16/455 主分类号 C23C14/22
代理机构 代理人
主权项
地址 Hsin-Chu TW