SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To inhibit fluctuation in electric characteristics in a semiconductor device using a transistor which has an oxide semiconductor and improve reliability.SOLUTION: A semiconductor device comprises: a gate electrode on an insulating surface; an oxide semiconductor film which overlaps the gate electrode; a gate insulation film between the gate electrode and the oxide semiconductor film, which contacts the oxide semiconductor film; a protection film on the oxide semiconductor film on a surface on the side opposite to a surface which contacts the gate insulation film; and a pair of electrodes which contact the oxide semiconductor film. In the gate insulation film or the protection film, an emission amount of a gas at a mass-to-charge ratio m/z=17 emitted by a heat treatment is larger than an emission amount of a nitrogen oxide emitted by a heat treatment.