SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE USING SAME

摘要

The purpose of the present invention is to minimize increases in chip temperature that accompany increases in the output power of a power conversion device, and to decrease the size of a power conversion device. This semiconductor device is a power semiconductor device provided with: a first power semiconductor element (1a) that constitutes an upper arm of an inverter circuit; a second power semiconductor element (1c) that constitutes a lower arm of the inverter circuit; a first lead frame (3) that transmits power to the first power semiconductor element (1a); a second lead frame (4) that transmits power to the second power semiconductor element (1c); a first gate lead frame (5) that transmits a control signal to the first power semiconductor element (1a); and a sealing member that seals the first power semiconductor element (1a), the second power semiconductor element (1c), the first lead frame (3), the second lead frame (4), and the first gate lead frame (5). The sealing member has a through hole formed therein. One part of the first gate lead frame and one part of the second lead frame (4) are exposed on the inner peripheral surface of the through hole.