TUNNELING FIELD EFFECT TRANSISTOR

摘要

The inventive concepts provide tunneling field effect transistors. The tunneling field effect transistor includes a source region, a drain region, a channel region, and a pocket region. The channel region includes a first material, and is disposed between the source region and the drain region. The pocket region includes a second material, and is disposed between the source region and the drain region. The channel region includes a first region adjacent to the source region, and a second region adjacent to the drain region. A first energy band gap of the first region is smaller than a second energy band gap of the second region, and a third energy band gap of the pocket region is different from the first energy band gap and the second energy band gap.

主权项

1. A tunneling field effect transistor comprising:
a source region and a drain region; a channel region including a first material, and disposed between the source region and the drain region; and a pocket region including a second material different from the first material, and disposed between the source region and the drain region, wherein the channel region comprises a first region adjacent to the source region, and a second region adjacent to the drain region, wherein a first energy band gap of the first region is smaller than a second energy band gap of the second region, and wherein a third energy band gap of the pocket region is different from the first energy band gap and the second energy band gap.