METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH FULLY SILICIDED GATE ELECTRODE STRUCTURES

摘要

A method for fabricating an integrated circuit includes providing a semiconductor substrate including a gate electrode structure thereon and sidewall spacers along sidewalls of the gate electrode structure to a first height along the sidewalls, forming a planarizing carbon-based polymer layer over the gate electrode structure and over the sidewall spacers, and etching a portion of the optical planarization layer to expose a top portion the gate electrode structure. Further, the method includes etching an upper portion of the sidewall spacers selective to the gate electrode structure so as to expose the sidewalls of the upper portion of the gate electrode structure and depositing a silicide-forming material over the top portion of the gate electrode structure and the sidewalls of the upper portion of the gate electrode structure. Still further, the method includes annealing the silicide-forming material.

主权项

1. A method for fabricating an integrated circuit comprising:
providing a gate electrode structure overlying a semiconductor substrate and sidewall spacers along sidewalls of the gate electrode structure to a first height along the sidewalls; forming a planarizing carbon-based polymer layer over the gate electrode structure and over the sidewall spacers; etching a portion of the planarizing carbon-based polymer layer to expose a top portion of the gate electrode structure and an upper portion of the sidewall spacers, the upper portion of the sidewall spacers being adjacent to sidewalls of an upper portion of the gate electrode structure; etching the upper portion of the sidewall spacers selective to the gate electrode structure so as to expose the sidewalls of the upper portion of the gate electrode structure; etching a remaining portion of the planarizing carbon-based polymer layer so as to expose a remaining portion of the sidewall spacers; depositing a silicide-forming material over the top portion of the gate electrode structure, the sidewalls of the upper portion of the gate electrode structure, and the remaining portion of the sidewall spacers; and annealing the silicide-forming material to form a fully silicided gate electrode structure.