| 摘要 |
An EUV lithography system 1 has an EUV beam path and a monitor beam path 51. ;The EUV beam path comprises a mirror system 13 having plurality of mirror elements 17, the orientations of which can be changed.;The monitor beam path comprises a monitor radiation source 53, a screen 71 and a spatially resolving detector 77, wherein the mirror system is arranged in the monitor beam path between the monitor radiation source and the screen.;Each one of the mirror elements generates an image of the monitor radiation source in an image plane associated with the respective mirror elements, wherein distances B between the image planes and the screen have a maximum distance, distances A between each one of the mirror elements and the image plane have a minimum distance, and wherein the maximum distance B is less than half of the minimum distance A. |
