DRAIN EXTENDED MOS TRANSISTORS WITH SPLIT CHANNEL

摘要

A circuit including both drain-extended metal-oxide-semiconductor (DEMOS) and low-voltage metal-oxide-semiconductor (LV_MOS) devices and methods of manufacturing the same are provided. In one embodiment, DEMOS device includes a first channel, a gate, a second channel, and a drain extension, wherein the second channel is split into a first portion and a second portion, and wherein the first portion of the second channel stops under the gate and is spaced away from the drain extension. Other embodiments are also described.