Disclosed is a semiconductor device that is provided with a bipolar transistor (BT). In the semiconductor device, a third opening (16) where a pillar bump (20) and second wiring (14) electrically connected to an emitter layer (5) are in contact with each other is disposed by being shifted in the longitudinal direction of the emitter layer (5) from a position corresponding to a portion directly above the emitter layer (5), said third opening (16) being disposed with respect to the emitter layer (5) such that an emitter layer (5) end portion in the longitudinal direction and an opening end of the third opening (16) substantially match.
