SENSE AMPLIFYING CIRCUIT OF RESISTANCE CHANGING MEMORY

摘要

Disclosed is a sense amplifying circuit for sensing a resistance change of a resistive memory. The sense amplifying circuit has a cell bias boosting unit and a reference bias boosting unit, and enlarges an operational margin of a common source amplifier via a transistor connected to a diode. The common source amplifier may perform a stable operation via the enlarged operational margin. Additionally, the present invention amplifies a small signal level via two step amplification to perform an effective sense amplification operation.