薄膜电晶体及其制造方法和应用;Thin film transistor, method of manufacturing thereof, and application thereof

摘要

一种薄膜电晶体，该薄膜电晶体包括基板以及设置在所述基板上的缓冲层，其中所述缓冲层包括：n层氮化矽层；以及第一氧化矽层，所述第一氧化矽层设置在所述n层氮化矽层之上，其中所述n层氮化矽层中相邻两层氮化矽层的致密度不同，且n大于或等于3，且n是自然数。本发明的薄膜电晶体通过改变成膜结构和成膜膜质，形成具有n层氮化矽层和一层氧化矽层层叠结构的缓冲层，可强化缓冲层的阻挡能力，有效阻挡玻璃基板中的金属离子向上扩散，减少多晶矽层的缺陷中心并降低漏电流，同时改善多晶矽背面介面的品质，防止在多晶矽背面介面形成漏电的途径，提高多晶矽层的稳定性，进而提高薄膜电晶体的可靠性，提升显示装置的良率和品质。;The present invention relates to a thin film transistor. The thin film transistor comprises a substrate and a buffer layer is disposed on the substrate. The buffer layer comprises a n-layered silicon nitride layer; and a first silicon oxide layer is disposed over the n-layered silicon nitride layer, wherein the adjacent layers of the n-layered silicon nitride layer have different density and n is greater than or equal to 3.The thin film transistor of the present invention formed the n-layered silicon nitride layer and the buffer layer of the first silicon oxide layer by changing the film structure and film quality, which can enhance the barrier function of the buffer layer, effectively blocks metal ions of glass substrate upward diffusion, reduces defect centers of polysilicon layer and leakage current, improves quality of polysilicon back interface, prevents forming leakage pathways in polysilicon back interface, improves the stability of the polysilicon layer, thus improves film the reliability of the thin film transistors to enhance the yield and quality of the display device.