发明名称 |
METHOD OF MANUFACTURING DISPLAY DEVICE AND METHOD OF MANUFACTURING THIN-FILM TRANSISTOR |
摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a display device with high definition and a high aperture ratio.SOLUTION: A method of manufacturing a display device according to one embodiment includes a process of forming a thin-film transistor on an insulating substrate. The process of forming the thin-film transistor includes: forming an oxide semiconductor layer above the insulating substrate; forming a gate insulating layer above the oxide semiconductor layer; forming a gate electrode above the oxide semiconductor layer with the gate insulating layer sandwiched therebetween; and irradiating the oxide semiconductor layer with laser light from above the gate electrode and the gate insulating layer, thereby making the resistances of a second region and a third region sandwiching a first region facing the gate electrode in the oxide semiconductor layer lower than that of the first region.</p> |
申请公布号 |
JP2015130463(A) |
申请公布日期 |
2015.07.16 |
申请号 |
JP20140002295 |
申请日期 |
2014.01.09 |
申请人 |
JAPAN DISPLAY INC |
发明人 |
OKADA TAKASHI |
分类号 |
H01L21/336;G09F9/00;G09F9/30;H01L21/265;H01L21/268;H01L21/28;H01L21/425;H01L21/428;H01L29/417;H01L29/786;H01L51/50 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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