发明名称 METHOD OF MANUFACTURING DISPLAY DEVICE AND METHOD OF MANUFACTURING THIN-FILM TRANSISTOR
摘要 <p>PROBLEM TO BE SOLVED: To obtain a display device with high definition and a high aperture ratio.SOLUTION: A method of manufacturing a display device according to one embodiment includes a process of forming a thin-film transistor on an insulating substrate. The process of forming the thin-film transistor includes: forming an oxide semiconductor layer above the insulating substrate; forming a gate insulating layer above the oxide semiconductor layer; forming a gate electrode above the oxide semiconductor layer with the gate insulating layer sandwiched therebetween; and irradiating the oxide semiconductor layer with laser light from above the gate electrode and the gate insulating layer, thereby making the resistances of a second region and a third region sandwiching a first region facing the gate electrode in the oxide semiconductor layer lower than that of the first region.</p>
申请公布号 JP2015130463(A) 申请公布日期 2015.07.16
申请号 JP20140002295 申请日期 2014.01.09
申请人 JAPAN DISPLAY INC 发明人 OKADA TAKASHI
分类号 H01L21/336;G09F9/00;G09F9/30;H01L21/265;H01L21/268;H01L21/28;H01L21/425;H01L21/428;H01L29/417;H01L29/786;H01L51/50 主分类号 H01L21/336
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