| 发明名称 |
DOPED GALLIUM NITRIDE HIGH-ELECTRON MOBILITY TRANSISTOR |
| 摘要 |
Embodiments include high electron mobility transistors (HEMTs) comprising a substrate and a barrier layer including a doped component. The doped component may be a germanium doped layer or a germanium doped pulse. Other embodiments may include methods for fabricating such a HEMT. |
| 申请公布号 |
US2015200287(A1) |
申请公布日期 |
2015.07.16 |
| 申请号 |
US201414157245 |
申请日期 |
2014.01.16 |
| 申请人 |
TriQuint Semiconductor, Inc. |
发明人 |
Beam, III Edward A.;Xie Jinqiao |
| 分类号 |
H01L29/778;H01L21/02;H01L29/205 |
主分类号 |
H01L29/778 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An apparatus comprising:
a substrate; a gallium nitride (GaN) buffer layer disposed on the substrate; and an aluminum gallium nitride (AlGaN) barrier layer disposed on the GaN buffer layer, the AlGaN barrier layer including a doped component. |
| 地址 |
Hillsboro OR US |
