METHOD AND SYSTEM FOR PROVIDING MULTIPLE SELF-ALIGNED LOGIC CELLS IN A SINGLE STACK

摘要

A magnetic device including memory cells is provided. Each memory cell can store multiple bits corresponding to multiple data storage layers. Desired spacing(s) and desired junction angle(s) for the data storage layers are determined in each memory cell. The desired junction angle(s) and the desired spacing(s) correspond to spin transfer switching currents for the data storage layers having. A magnetoresistive stack including plurality of layers for each of the memory cells is deposited. The memory cells include the data storage layers. A data storage layer layers is spaced apart from nearest data storage layer(s) by a distance corresponding to the desired spacing(s). A mask corresponding to the memory cells is provided on the layers. The memory cells are defined such that each memory cell has the desired junction angle(s) and the desired spacing(s) and such that the data storage layers for each of the memory cells is self-aligned.

主权项

1. A method for providing a magnetic device including a plurality of memory cells, each of the plurality of memory cells capable of storing a plurality of bits, the plurality of bits corresponding to a plurality of data storage layers, the method comprising:
determining at least one desired spacing and at least one desired junction angle for the plurality of data storage layers in each of the plurality of memory cells, the at least one desired junction angle and the at least one desired spacing corresponding to the plurality data storage layers having a plurality of spin transfer switching currents; depositing a magnetoresistive stack including plurality of layers for each of the plurality of memory cells, the plurality of memory cells including the plurality of data storage layers, a data storage layer of plurality of data storage layers being spaced apart from a nearest data storage layer of plurality of data storage layers by a distance corresponding to the at least one desired spacing; providing a mask on the plurality of layers, the mask corresponding to the plurality of memory cells; and defining the plurality of memory cells such that each of the plurality of memory cells has the at least one desired junction angle and the at least one desired spacing and such that the plurality of data storage layers for each of the plurality of memory cells is self-aligned.