| 发明名称 |
SPIN POLARIZATION TRANSISTOR ELEMENT |
| 摘要 |
There are provided with a source part made of a ferromagnetic material magnetized in a first direction, a drain part made of a ferromagnetic material magnetized in the first direction, and separated from and arranged in parallel to the source part, a channel part arranged between the source part and the drain part, and bonded with the source part and the drain part directly or through a tunnel layer, and a circularly polarized light irradiation part that irradiates the channel part with circularly polarized light for controlling a direction of spin of the channel part. |
| 申请公布号 |
US2015200282(A1) |
申请公布日期 |
2015.07.16 |
| 申请号 |
US201314421227 |
申请日期 |
2013.07.25 |
| 申请人 |
Japan Science and Technology Agency ;The University of York |
发明人 |
Hirohata Atsufumi |
| 分类号 |
H01L29/66;H01L29/20;H01L29/82;H01L29/778 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A spin polarization transistor element comprising:
a source part made of a ferromagnetic material magnetized in a first direction; a drain part made of a ferromagnetic material magnetized in the first direction, and separated from and arranged in parallel to the source part; a channel part arranged between the source part and the drain part, and bonded with the source part and the drain part directly or through a tunnel layer; and a circularly polarized light irradiation part configured to irradiate the channel part with circularly polarized light for controlling a direction of spin of the channel part. |
| 地址 |
Kawaguchi-shi, Saitama JP |
