High Voltage Double-Diffused MOS (DMOS) Device and Method of Manufacture

摘要

A method of forming an integrated DMOS transistor/EEPROM cell includes forming a first mask over a substrate, forming a drift implant in the substrate using the first mask to align the drift implant, simultaneously forming a first floating gate over the drift implant, and a second floating gate spaced apart from the drift implant, forming a second mask covering the second floating gate and covering a portion of the first floating gate, forming a base implant in the substrate using an edge of the first floating gate to self-align the base implant region, and simultaneously forming a first control gate over the first floating gate and a second control gate over the second floating gate. The first floating gate, first control gate, drift implant, and base implant form components of the DMOS transistor, and the second floating gate and second control gate form components of the EEPROM cell.

主权项

1. A double diffused metal oxide semiconductor (DMOS) transistor, comprising:
a substrate; a base implant region formed in the substrate; a source region formed in the base implant; a drain region formed in the substrate; a floating gate formed above the substrate; a control gate extending over the base implant region; a floating gate electrode electrically coupled to the floating gate; and control electronics configured to control a voltage applied to the floating gate via the floating gate electrode, thereby controlling a breakdown voltage and a source-drain resistance of the DMOS device.