MARK, METHOD FOR FORMING SAME, AND EXPOSURE APPARATUS

摘要

A mark forming method includes: a step of forming a resist mark including recessed portion based on an image of a mark exposed on a wafer; a step of coating the recessed portion, in an area of the wafer in which the resist mark has been formed, with a polymer layer containing a block copolymer; a step of performing annealing for the polymer layer so as to allow the polymer layer to form a self-assembled area; a step of performing etching so as to selectively remove a portion of the self-assembled area; and a step of forming a wafer mark in the wafer by using the self-assembled area from which the portion thereof has been removed. When forming a circuit pattern by using the directed self-assemble of the block copolymer, a mark can be also formed, in parallel with the formation of the circuit pattern.

主权项

1. A mark forming method comprising:
forming recessed portion on a mark formation area of a substrate; coating the recessed portion with a polymer layer containing a block copolymer; allowing the polymer layer in the recessed portion to form a self-assembled area; selectively removing a portion of the self-assembled area; and forming a positioning mark by using the self-assembled area from which the portion of the self-assembled area has been removed.