SELF-ALIGNED CONTACT STRUCTURE

摘要

Embodiments of present invention provide a method of forming a semiconductor structure. The method includes forming a semiconductor structure having a first metal layer and a plurality of dielectric layers on top of the first metal layer; creating one or more openings through the plurality of dielectric layers to expose the first metal layer underneath the plurality of dielectric layers; causing the one or more openings to expand downward into the first metal layer and expand horizontally into areas underneath the plurality of dielectric layers; applying a layer of lining material in lining sidewalls of the one or more openings inside the plurality of dielectric layers; and filling the expanded one or more openings with a conductive material.

主权项

1. A method comprising:
forming a transistor structure having an aluminum gate and one or more dielectric layers on top of said aluminum gate; creating one or more contact holes through said one or more dielectric layers to expose said aluminum gate underneath said one or more dielectric layers; causing said one or more contact holes to expand into said aluminum gate and horizontally into areas underneath said one or more dielectric layers; and filling said expanded contact holes with a conductive material.