POLISHING PAD, POLYURETHANE LAYER FOR POLISHING PAD, AND METHOD OF POLISHING SILICON WAFER

摘要

PROBLEM TO BE SOLVED: To provide a polishing pad, a polyurethane layer for the polishing pad, and a method of polishing a silicon wafer which increase polishing speed, realize efficient polishing and result in a low defect level.SOLUTION: A polyurethane layer for forming a polishing pad for semiconductor wafer polishing is described. The polyurethane layer comprises: a foamed polyurethane which has a density of 640 to 1,200 kg/mand a plurality of cells having an average diameter of 20 to 200 micrometers; and particles of a hydrophobic polymer having a critical surface energy of less than 35 mN/m and having a median particle size of 3 to 100 micrometers.