发明名称 |
PAGE MIGRATION IN A 3D STACKED HYBRID MEMORY |
摘要 |
A die-stacked hybrid memory device implements a first set of one or more memory dies implementing first memory cell circuitry of a first memory architecture type and a second set of one or more memory dies implementing second memory cell circuitry of a second memory architecture type different than the first memory architecture type. The die-stacked hybrid memory device further includes a set of one or more logic dies electrically coupled to the first and second sets of one or more memory dies, the set of one or more logic dies comprising a memory interface and a page migration manager, the memory interface coupleable to a device external to the die-stacked hybrid memory device, and the page migration manager to transfer memory pages between the first set of one or more memory dies and the second set of one or more memory dies. |
申请公布号 |
US2015199126(A1) |
申请公布日期 |
2015.07.16 |
申请号 |
US201414152003 |
申请日期 |
2014.01.10 |
申请人 |
Advanced Micro Devices, Inc. |
发明人 |
Jayasena Nuwan S.;Loh Gabriel H.;O'Connor James M.;Chatterjee Niladrish |
分类号 |
G06F3/06 |
主分类号 |
G06F3/06 |
代理机构 |
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代理人 |
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主权项 |
1. An integrated circuit (IC) device comprising:
a die-stacked hybrid memory device comprising:
a first set of one or more memory dies implementing first memory cell circuitry of a first memory architecture type;a second set of one or more memory dies implementing second memory cell circuitry of a second memory architecture type different than the first memory architecture type; anda set of one or more logic dies electrically coupled to the first and second sets of one or more memory dies, the set of one or more logic dies comprising a memory interface and a page migration manager, the memory interface coupleable to a device external to the die-stacked hybrid memory device, and the page migration manager to transfer memory pages between the first set of one or more memory dies and the second set of one or more memory dies. |
地址 |
Sunnyvale CA US |