PULSED LASER ANNEAL PROCESS FOR TRANSISTORS WITH PARTIAL MELT OF A RAISED SOURCE-DRAIN

摘要

A non-planar transistor including partially melted raised semiconductor source/drains disposed on opposite ends of a semiconductor fin with the gate stack disposed there between. The raised semiconductor source/drains comprise a super-activated dopant region above a melt depth and an activated dopant region below the melt depth. The super-activated dopant region has a higher activated dopant concentration than the activated dopant region and/or has an activated dopant concentration that is constant throughout the melt region. A fin is formed on a substrate and a semiconductor material or a semiconductor material stack is deposited on regions of the fin disposed on opposite sides of a channel region to form raised source/drains. A pulsed laser anneal is performed to melt only a portion of the deposited semiconductor material above a melt depth.

主权项

1. A non-planar transistor, comprising:
a semiconductor fin including a channel region disposed below a gate stack; and raised semiconductor source/drains coupled to the channel region and disposed on opposite ends of the fin with the gate stack disposed there between, wherein the raised semiconductor source/drains comprise a super-activated dopant region above a melt depth and an activated dopant region below the melt depth, the super-activated dopant region having a higher activated dopant concentration than the activated dopant region.