SEMICONDUCTOR INTERGRATED CIRCUIT APPARATUS AND MANUFACTURING METHOD FOR SAME

摘要

A semiconductor integrated circuit apparatus and a manufacturing method for the same are provided in such a manner that a leak current caused by a ballast resistor is reduced, and at the same time, the inconsistency in the leak current is reduced. The peak impurity concentration of the ballast resistors is made smaller than the peak impurity concentration in the extension regions, and the depth of the ballast resistors is made greater than the depth of the extension regions.

主权项

1. A semiconductor integrated circuit apparatus, comprising a first insulated gate transistor that includes: a first well region of a first conductivity type in a semiconductor substrate; a first gate electrode provided in the first well region with a first gate insulating film in between; a first channel dope region of the first conductivity type provided beneath the first gate electrode; a first extension region of a second conductivity type that is a conductivity type opposite to the first conductivity type, a first source region of the second conductivity type, and a first drain region of the second conductivity type provided on both sides of the first gate electrode; and a first ballast resistor of the second conductivity type that separates the first drain region, wherein a peak impurity concentration of the first ballast resistor is lower than a peak impurity concentration of the first extension region, and a depth of the first ballast resistor is greater than a depth of the first extension region.